Datasheet > HE8551

HE8551

更新时间： 2024-11-11 22:33:23

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	40K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HE8551 数据手册

Spec. No. : HE6113-B

Issued Date : 1992.09.30

Revised Date : 2000.09.20

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HE8551

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HE8551 is designed for use in 2W output amplifier of portable radios

in class B push-pull operation.

Features

• High Total Power Dissipation (PT: 2W, TC=25°C)

• High Collector Current (IC: 1.5A)

• Complementary to HE8051

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ....................................................................................................... -55 ~ +150 °C

Junction Temperature ............................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................................... 1 W

Total Power Dissipation (Tc=25°C)................................................................................................... 2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... -40 V

VCEO Collector to Emitter Voltage................................................................................................. -25 V

VEBO Emitter to Base Voltage......................................................................................................... -6 V

IC Collector Current ...................................................................................................................... -1.5 A

IB Base Current ............................................................................................................................ -0.5 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=-100uA, IE=0

IC=-2mA, IB=0

IE=-100uA, IC=0

VCB=-35V, IE=0

BVCBO

BVCEO

BVEBO

ICBO

-40

-25

-6

-100

-0.5

-1.2

-1

IEBO

VEB=-6V, IC=0

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE1

*hFE2

*hFE3

IC=-0.8A, IB=-80mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-5mA

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

VCE=-10V, IC=-50mA, f=100MHz

100

500

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE2

Rank

Range

85-160

120-200

190-300

250-500

HSMC Product Specification

12 3

中文翻译

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与HE8551相关器件

型号	品牌	获取价格	描述	数据表
HE8551_11	UTC	获取价格	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8551_15	UTC	获取价格	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8551C	UTC	获取价格	Transistor
HE8551G-C-T9N-B	UTC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
HE8551G-C-T9N-K	UTC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
HE8551G-C-T9N-R	UTC	获取价格	Small Signal Bipolar Transistor
HE8551G-D-T92-K	UTC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
HE8551G-D-T9N-B	UTC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
HE8551G-D-T9N-K	UTC	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
HE8551G-D-T9N-R	UTC	获取价格	Small Signal Bipolar Transistor

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