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HE8551 PDF预览

HE8551

更新时间: 2024-11-11 22:33:23
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页数 文件大小 规格书
3页 40K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HE8551 数据手册

 浏览型号HE8551的Datasheet PDF文件第2页浏览型号HE8551的Datasheet PDF文件第3页 
Spec. No. : HE6113-B  
Issued Date : 1992.09.30  
Revised Date : 2000.09.20  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HE8551  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HE8551 is designed for use in 2W output amplifier of portable radios  
in class B push-pull operation.  
Features  
High Total Power Dissipation (PT: 2W, TC=25°C)  
High Collector Current (IC: 1.5A)  
Complementary to HE8051  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature ....................................................................................................... -55 ~ +150 °C  
Junction Temperature ............................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W  
Total Power Dissipation (Tc=25°C)................................................................................................... 2 W  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage.................................................................................................... -40 V  
VCEO Collector to Emitter Voltage................................................................................................. -25 V  
VEBO Emitter to Base Voltage......................................................................................................... -6 V  
IC Collector Current ...................................................................................................................... -1.5 A  
IB Base Current ............................................................................................................................ -0.5 A  
(Ta=25°C)  
Characteristics  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-100uA, IE=0  
IC=-2mA, IB=0  
IE=-100uA, IC=0  
VCB=-35V, IE=0  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-40  
-25  
-6  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
-100  
-100  
-0.5  
-1.2  
-1  
IEBO  
VEB=-6V, IC=0  
*VCE(sat)  
*VBE(sat)  
VBE(on)  
*hFE1  
*hFE2  
*hFE3  
IC=-0.8A, IB=-80mA  
IC=-0.8A, IB=-80mA  
VCE=-1V, IC=-10mA  
VCE=-1V, IC=-5mA  
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-800mA  
VCE=-10V, IC=-50mA, f=100MHz  
-
-
V
V
45  
85  
40  
100  
-
500  
-
-
fT  
MHz  
*Pulse Test : Pulse Width 380us, Duty Cycle2%  
Classification on hFE2  
Rank  
B
C
D
E
Range  
85-160  
120-200  
190-300  
250-500  
HSMC Product Specification  

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