Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
TO-92
• High DC Current gain: 100-500 at IC=150mA
• Complementary to HE8050S
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
-25
-20
-5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA
V
V
-1
-0.5
-1
500
-
-
-
100
-
150
-
100
-
-
-
10
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hEF
Rank
C
C1
D
D1
E
hFE1
hFE2
100-180
-
100-180
>100
160-300
-
160-300
>100
250-500
-
HE8550S
HSMC Product Specification