5秒后页面跳转
HE8550S PDF预览

HE8550S

更新时间: 2024-11-11 22:33:23
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
4页 40K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

HE8550S 数据手册

 浏览型号HE8550S的Datasheet PDF文件第2页浏览型号HE8550S的Datasheet PDF文件第3页浏览型号HE8550S的Datasheet PDF文件第4页 
Spec. No. : HE6129  
Issued Date : 1993.01.15  
Revised Date : 2002.03.05  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HE8550S  
PNP EPITAXIAL PLANAR TRANSISTOR  
Description  
The HE8550S is designed for general purpose amplifier applications.  
Features  
TO-92  
High DC Current gain: 100-500 at IC=150mA  
Complementary to HE8050S  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ........................................................................................ -25 V  
VCEO Collector to Emitter Voltage..................................................................................... -20 V  
VEBO Emitter to Base Voltage............................................................................................. -5 V  
IC Collector Current ...................................................................................................... -700 mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-10uA, IE=0  
IC=-1mA, IB=0  
IE=-10uA, IC=0  
VCB=-20V, IE=0  
IC=-0.5A, IB=-50mA  
VCE=-1V, IC=-150mA  
VCE=-1V, IC=-150mA  
VCE=-1V, IC=-500mA  
VCE=-10V, IC=-20mA, f=100MHz  
VCB=-10V, f=1MHz  
BVCBO  
BVCEO  
BVEBO  
ICBO  
*VCE(sat)  
VBE(on)  
*hFE1  
*hFE2  
fT  
-25  
-20  
-5  
-
-
-
-
-
-
-
-
-
-
-
V
V
V
uA  
V
V
-1  
-0.5  
-1  
500  
-
-
-
100  
-
150  
-
100  
-
-
-
10  
MHz  
pF  
Cob  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification Of hEF  
Rank  
C
C1  
D
D1  
E
hFE1  
hFE2  
100-180  
-
100-180  
>100  
160-300  
-
160-300  
>100  
250-500  
-
HE8550S  
HSMC Product Specification  

与HE8550S相关器件

型号 品牌 获取价格 描述 数据表
HE8550-T92-B UTC

获取价格

Transistor
HE8550-T92-K UTC

获取价格

Transistor
HE8550-TO-92 UTC

获取价格

PNP EPITAXIAL SILIC ON TRANSISTOR
HE8550-X-AB3-R UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-AE3-R UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-T92-B UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-T92-K UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-T9N-B UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-T9N-K UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
HE8550-X-T9N-R UTC

获取价格

LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR