Datasheet > HE8050

HE8050

更新时间： 2024-01-23 01:55:38

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	39K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HE8050 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.7 A	配置：	Single
最小直流电流增益 (hFE)：	250	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.625 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	150 MHz

HE8050 数据手册

Spec. No. : HE6112

Issued Date : 1992.09.30

Revised Date : 2001.08.13

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HE8050

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HE8050 is designed for use in 2W output amplifier of portable

radios in class B push-pull operation.

Features

• High total power dissipation (PT: 2W, TC=25°C)

• High collector current (IC: 1.5A)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 40 V

VCEO Collector to Emitter Voltage ..................................................................................... 25 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current........................................................................................................... 1.5 A

IB Base Current ............................................................................................................. 500 mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA

IC=2mA

IE=100uA

VCB=35V

100

0.5

1.2

IEBO

VEB=6V

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE1

*hFE2

*hFE3

IC=0.8A, IB=80mA

VCE=1V, IC=10mA

VCE=1V, IC=5mA

VCE=1V, IC=100mA

VCE=1V, IC=800mA

VCE=10V, IC=50mA

500

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE2

Rank

Range

85-160

120-200

160-320

250-500

HE8050

HSMC Product Specification

12 3

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