Datasheet > HDY227

HDY227

更新时间： 2024-11-03 22:33:23

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	37K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HDY227 数据手册

Spec. No. : HE6401-B

Issued Date : 1998.06.21

Revised Date : 2000.09.20

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HDY227

NPN EPITACIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature........................................................................................... -55 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ........................................................................................ 30 V

VCEO Collector to Emitter Voltage ..................................................................................... 25 V

VEBO Emitter to Base Voltage ............................................................................................. 5 V

IC Collector Current....................................................................................................... 300 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=10mA, IB=0

IE=10uA, IC=0

VCB=25V, IE=0

VEB=3V, IC=0

IC=300mA, IB=30mA

IC=50mA, VCE=1V

BVCBO

BVCEO

BVEBO

ICBO

IEBO

*VCE(sat)

*hFE

100

400

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE

Rank

hFE

70-140

120-240

200-400

HSMC Product Specification

12 3

中文翻译

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