Datasheet > HDD25NXX

HDD25NXX

更新时间： 2024-10-04 05:35:15

品牌	Logo	应用领域
HIRECT		二极管
页数	文件大小	规格书
6页	78K
描述
Diode-Diode MODULE

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中文翻译

获取价格

数据手册

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HDD25NXX 数据手册

Diode-Diode MODULE HDD25NXX

Symbol

Characteristics

Conditions

T_J(⁰C)

Value

Unit

BLOCKING PARAMETERS

V_RRM

V_DRM

I_RRM

Repetitive peak reverse voltage

Repetitive peak off-stage voltage

Repetitive peak reverse current

150

200-1800

V = V_RRM

CONDUCTING PARAMETERS

180 sine, 50H_Z, T_C

= 100⁰C

I_F(AV)

I_RMS

I_FSM

Average on-state current

RMS on-state current

Surge on-state current

Sine wave, 10mS

without reverse

voltage

500

150

I²t

A²S

1250

1.40

On-state

current = 80A

V_T

Peak on-state voltage drop

V₀

R₀

Threshold voltage

On-state slope resistance

0.85

6.00

mΩ

THERMAL & MECHANICAL PARAMETERS

Thermal impedance, 180

R_{TH (J-C)}

J to C Per Arm

Per Module

C to HK Per Arm

Per Module

1.00

0.50

0.20

0.10

⁰C/W

conduction, Sine

R_{TH (C-HK)}

Thermal impedance

Maximum Permissible junction

temperature

Storage temperature range

Insulation test voltage, RMS

Mounting Torque

T_J

150

⁰C

T_STG

V_ISOL

-40 – 150

F = 50Hz, 1 min

2.5

Terminal connection Torque

Weight

gms

1 of 6

H I N D R E C T I F I E R S L T D

12 3 4 5 6

中文翻译

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