Datasheet > HDB101LS

HDB101LS

更新时间： 2024-11-12 18:04:43

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	169K
描述
Reverse Voltage Vr : 50 V;Forward Current Io : 1.0 A;Max Surge Current : 50 A;Forward Voltage Vf : 1.0 V;Reverse Current Ir : 5.0 uA;Recovery Time : 50 ns;Package / Case : DB-LS;Mounting Style : SMD/SMT;Notes : DB-LS,1.0 A,50 V,Bridge

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HDB101LS 数据手册

HDB101LS

THRU

HDB108LS

SINGLE-PHASE GLASS PASSIVATED

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Good for automation insertion

* Ideal for printed circuit board

* Reliable low cost construction utilizing molded

* Glass passivated device

* Polarity symbols molded on body

* Mounting position: Any

DB-LS

(

)

.255 6.5

MECHANICAL DATA

(

.245 6.2

* Epoxy: Device has UL flammability classification 94V-O

(

)

.410 10.4

(

)

.045 1.14

(

.360 9.4

(

.035 0.89

(

)

.060 1.524

(

)

.037 0.95

(8.8)

(7.8)

.346

.307

(

)

.144 3.65

(

.089 2.25

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

resistive or inductive load.

(

)

.205 5.2

(

.195 5.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At T = 25^oC unless otherwise noted)

RATINGS

SYMBOL HDB101LSHDB102LS HDB103LS HDB104LS HDB105LS HDB106LS HDB107LS HDB108LS UNITS

V_RRM

V_RMS

Volts

Maximum Recurrent Peak Reverse Voltage

100

200

140

300

210

400

280

600

420

800

560

1000

700

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

V_DC

I_O

Volts

100

200

300

400

600

800

1000

Maximum Average Forward Output Current at T = 40^oC

1.0

Amps

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

I_FSM

Amps

I²t

A²/S

Typical Current Squared Time

10.3



J A

J L

⁰C/W

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

STG

-55 t o + 1 50

⁰C

ELECTRICAL CHARACTERISTICS (At T = 25^oC unless otherwise noted)

CHARACTERISTICS

SYMBOL

V_F

UNITS

Volts

HDB101LSHDB102LS HDB103LS HDB104LS HDB105LS HDB106LS HDB107LS HDB108LS

Maximum Forward Voltage Drop per Bridge

Element at 1.0A DC

1.7

1.0

1.3

@T_A= 25^oC

@T_A= 125^oC

uAmps

Maximum Reverse Current at Rated

2.0

500

I_R

DC Blocking Voltage per element

Maximum reverse recovery time (Note 2)

T_rr

Note: 1.

Thermal Resistance: Mounted on PCB.

2020-04/97

REV:A

2.Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

12 3 4 5 6

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与HDB101LS相关器件

型号	品牌	获取价格	描述	数据表
HDB102G	TSC	获取价格	1.0 AMP. Glass Passivated Bridge High Efficient Rectifiers
HDB102G	LUNSURE	获取价格	1.0Amp glass passivated bridge high efficient rectifier 50to1000 volts
HDB102G	MCC	获取价格	1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts
HDB102G-BP	MCC	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, DB-1, 4 PIN
HDB102LS	RECTRON	获取价格	Reverse Voltage Vr : 100 V;Forward Current Io : 1.0 A;Max Surge Current : 50 A;Forward Vol
HDB103G	LUNSURE	获取价格	1.0Amp glass passivated bridge high efficient rectifier 50to1000 volts
HDB103G	TSC	获取价格	1.0 AMP. Glass Passivated Bridge High Efficient Rectifiers
HDB103G	MCC	获取价格	1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts
HDB103G-BP	MCC	获取价格	Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, DB-1, 4 PIN
HDB103LS	RECTRON	获取价格	Reverse Voltage Vr : 200 V;Forward Current Io : 1.0 A;Max Surge Current : 50 A;Forward Vol

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