Datasheet > HD880

HD880

更新时间： 2024-09-25 11:04:55

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	153K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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HD880 数据手册

N PN S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HD880

█ APPLICATIONS

Low Frequency Power Amplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-220

T_stg——Storage Temperature………………………… -55~150℃

T_j——Junction Temperature……………………………… 150℃

P_C——Collector Dissipation（T_c=25℃）…………………… 30W

V_CBO——Collector-Base Voltage……………………………60V

V_CEO——Collector-Emitter Voltage………………………… 60V

V_EBO——Emitter-Base Voltage……………………………… 7V

I_C——Collector Current……………………………………… 3A

Ib——Base Current………………………………………0.3A

1―Base，B

2―Collector，C

3―Emitter, E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

BVCEO

ICBO

IEBO

I_C=50mA, I_B=0

100 μA V_CB=60V, I_E=0

100 μA V_EB=7V, I_C=0

Emitter Cut-off Current

HFE（1^）DC Current Gain

HFE（2^）DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

300

V_CE=5V, I_C=0.5A

V_CE=5V, I_C=3A

I_C=3A, I_B=0.3A

V_CE=5V, I_C=0.5A

0.4 1

0.7 1

Current Gain-Bandwidth Product

Output Capacitance

Turn-On Time

Storage Time

Fall Time

MHz V_CE=5V, I_C=0.5A,

pF V_CB=10V, I_E=0，f=1MHz

μS

Cob

tON

tSTG

0.8

1.5

0.8

I_B1= -I_B2=0.2A

μS

V_CC=30V

μS

█ hFE Classification

60—120

100—200

150—300

中文翻译

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