Datasheet > HD1760JL_07

HD1760JL_07

更新时间： 2024-11-29 05:35:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体显示器晶体管
页数	文件大小	规格书
10页	251K
描述
Very high voltage NPN power transistor for high definition and slim CRT display

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HD1760JL_07 数据手册

HD1760JL

Very high voltage NPN power transistor

for high definition and slim CRT display

Features

■ State-of-the-art technology: diffused collector

“enhanced generation“ EHVS1

■ Wide range of optimum drive conditions

■ Stable performance versus operating

temperature variation

Applications

■ High-definition and slim CRT TV and monitors

TO-264

Description

The HD1760JL is manufactured using Diffused

Collector in Planar technology adopting new and

Enhanced High Voltage Structure 1 (E.H.V.S.1)

developed to fit High-Definition CRT display. The

new HD product series show improved silicon

efficiency bringing updated performance to the

Horizontal Deflection stage.

Internal schematic diagram

Table 1.

Part number

HD1760JL

Device summary

Marking

Package

Packaging

HD1760JL

TO-264

Tube

June 2007

Rev 3

1/10

www.st.com

12 3 4 5 6 7...10

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