Datasheet > HD1750JL_07

HD1750JL_07

更新时间： 2024-09-19 05:35:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体显示器晶体管
页数	文件大小	规格书
10页	227K
描述
Very high voltage NPN power transistor for high definition and slim CRT display

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HD1750JL_07 数据手册

HD1750JL

Very high voltage NPN power transistor for high definition and slim

CRT display

PRELIMINARY DATA

Features

■ State-of-the-art technology: diffused collector

“enhanced generation“ EHVS1

■ Wider range of optimum drive conditions

■ Less sensitive to operating temperature

variation

■ In compliance with the 2002/93/EC European

directive

TO-264

Description

The HD1750JL is manufactured using Diffused

Collector in Planar technology adopting new and

Enhanced High Voltage Stricture 1 (E.H.V.S.1)

developed to fit High-Definition CRT display. The

new HD product series show improved silicon

efficiency bringing updated performance to the

Horizontal Deflection stage.

Internal schematic diagram

Applications

■ High-definition and slim CRT TV and monitors

Order code

Part number

Marking

Package

Packaging

HD1750JL

TO-264

Tube

February 2007

Rev 3

1/10

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...10

中文翻译

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