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HD1750FX PDF预览

HD1750FX

更新时间: 2024-11-09 23:14:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体显示器晶体管高压
页数 文件大小 规格书
8页 189K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS

HD1750FX 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:8.51
外壳连接:ISOLATED最大集电极电流 (IC):24 A
集电极-发射极最大电压:800 V配置:SINGLE
最小直流电流增益 (hFE):6.5JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

HD1750FX 数据手册

 浏览型号HD1750FX的Datasheet PDF文件第2页浏览型号HD1750FX的Datasheet PDF文件第3页浏览型号HD1750FX的Datasheet PDF文件第4页浏览型号HD1750FX的Datasheet PDF文件第5页浏览型号HD1750FX的Datasheet PDF文件第6页浏览型号HD1750FX的Datasheet PDF文件第7页 
HD1750FX  
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH  
DEFINITION AND NEW SUPER-SLIM CRT DISPLAYS  
STATE-OF-THE-ART TECHNOLOGY:  
DIFFUSED COLLECTOR "ENHANCED  
GENERATION" EHVS1  
Figure 1: Package  
WIDER RANGE OF OPTIMUM DRIVE  
CONDITIONS  
LESS SENSITIVE TO OPERATING  
TEMPERATURE VARIATION  
FULLY INSULATED POWER PACKAGE U.L.  
COMPLIANT  
APPLICATIONS  
ISOWATT218FX  
HORIZONTAL DEFLECTION OUTPUT FOR  
DIGITAL TV, HDTV AND HIGH-END  
MONITORS  
Figure 2: Internal Schematic Diagram  
DESCRIPTION  
The device is manufactured using Diffused  
Collector in Planar technology adopting "Enhance  
High Voltage Structure" (EHVS1) developed to fit  
High-Definition CRT displays.  
The new HD product series show improved silicon  
efficiency bringing updated performance to the  
Horizontal Deflection stage.  
Table 1: Order Codes  
Part Number  
Marking  
Package  
Packaging  
HD1750FX  
HD1750FX  
ISOWATT218FX  
TUBE  
Rev. 2  
December 2005  
1/8  

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