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HD10-G PDF预览

HD10-G

更新时间: 2024-09-21 03:41:23
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
2页 82K
描述
Surface Mount Bridge Rectifier

HD10-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最小击穿电压:1000 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4最大非重复峰值正向电流:30 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:1000 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

HD10-G 数据手册

 浏览型号HD10-G的Datasheet PDF文件第2页 
Surface Mount Bridge Rectifier  
HD01-G THRU HD10-G (RoHS Device)  
Voltage Range 100 to 1000 V  
Current 0.8 Ampere  
Features  
MINI-DIP  
Plastic package has Underwriters  
Laboratory Flammability Classification  
94V-0  
C.02(.5)  
High surge current capability  
Saves space on printed circuit boards  
Glass passivated structure  
Mechanical Data  
Case: Molded plastic body over passivated  
junctions  
Terminals: Solderable per MIL-STD-750,  
method 2026  
Polarity: As marked on body  
Mounting position: Any  
Weight: 0.22 gram  
-
+
~
.275(7)  
MAX  
.043(1.1)  
.027(0.7)  
.165(4.2)  
.150(3.8)  
~
.014(.35)  
.006(.15)  
.051(1.3)  
.031(0.8)  
.019(0.5)  
.067(1.7)  
.057(1.3)  
.106(2.7)  
.090(2.3)  
.193(4.9)  
.177(4.5)  
.035(0.9)  
.106(2.7)  
.090(2.3)  
.118(3.0)  
MAX  
.008(0.2)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
CHARACTERISTIC  
SYMBOL HD01-G HD02-G HD04-G HD06-G HD08-G HD10-G  
UNIT  
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward Rectified  
Current TA=40oC  
0.8  
30  
A
A
V
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
Maximum Instantaneous Forward Voltage  
@ 0.8 A  
VF  
IR  
1.0  
Maximum DC Reverse Current @TJ=25oC  
uA  
uA  
5.0  
250  
At Rated DC Blocking Voltage @TJ=125oC  
A2  
S
Rating for fusing (t < 8.3ms)  
I2t  
5
CJ  
pF  
oC/W  
Typical junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
25  
85  
R JA  
Operating Junctionand Storage  
Temperature Range  
TJ, TSTG  
-55 to + 150  
oC  
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(2) Thermal Resistance form junction to ambient mounted on P.C.B with 0.5 x 0.5"(13x13mm) copper pads.  
1 / 2  

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