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HCTS02K/SAMPLE PDF预览

HCTS02K/SAMPLE

更新时间: 2024-09-28 14:42:31
品牌 Logo 应用领域
瑞萨 - RENESAS 输入元件逻辑集成电路
页数 文件大小 规格书
8页 293K
描述
HCT SERIES, QUAD 2-INPUT NOR GATE, CDFP14

HCTS02K/SAMPLE 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:14
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.66Is Samacsys:N
系列:HCTJESD-30 代码:R-CDFP-F14
逻辑集成电路类型:NOR GATE功能数量:4
输入次数:2端子数量:14
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
传播延迟(tpd):20 ns认证状态:Not Qualified
座面最大高度:2.92 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:6.285 mm
Base Number Matches:1

HCTS02K/SAMPLE 数据手册

 浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第2页浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第3页浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第4页浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第5页浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第6页浏览型号HCTS02K/SAMPLE的Datasheet PDF文件第7页 
TM  
HCTS02MS  
Radiation Hardened Quad  
2-Input NOR Gate  
August 1995  
Features  
Pinouts  
14 LEAD CERAMIC DUAL-IN-LINE  
METAL SEAL PACKAGE (SBDIP)  
MIL-STD-1835 CDIP2-T14  
TOP VIEW  
• 3 Micron Radiation Hardened SOS CMOS  
• Total Dose 200K RAD(Si)  
• SEP Effective LET No Upsets: >100 MEV-cm2/mg  
• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day  
(Typ)  
• Dose Rate Survivability: >1 x 1012 Rads (Si)/s  
• Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse  
Y1  
A1  
1
2
3
4
5
6
7
14 VCC  
13 Y4  
12 B4  
11 A4  
10 Y3  
B1  
Y2  
• Latch-Up Free Under Any Conditions  
A2  
• Military Temperature Range: -55oC to +125oC  
• Significant Power Reduction Compared to LSTTL ICs  
• DC Operating Voltage Range: 4.5V to 5.5V  
B2  
9
8
B3  
A3  
GND  
14 LEAD CERAMIC METAL SEAL  
FLATPACK PACKAGE (FLATPACK)  
MIL-STD-1835 CDFP3-F14  
TOP VIEW  
• LSTTL Input Compatibility  
- VIL = 0.8V Max  
- VIH = VCC/2 Min  
• Input Current Levels Ii 5µA at VOL, VOH  
Y1  
A1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
VCC  
Y4  
Description  
B1  
B4  
A4  
Y3  
Y2  
The Intersil HCTS02MS is a Radiation Hardened Quad 2-Input  
NOR Gate. A low on both inputs forces the output to a High state.  
A2  
B2  
B3  
A3  
The HCTS02MS utilizes advanced CMOS/SOS technology to  
achieve high-speed operation. This device is a member of  
radiation hardened, high-speed, CMOS/SOS Logic Family.  
GND  
8
The HCTS02MS is supplied in a 14 lead Ceramic Flatpack Pack-  
age (K suffix) or a 14 lead SBDIP Package (D suffix).  
TRUTH TABLE  
INPUTS  
OUTPUTS  
An  
L
Bn  
L
Yn  
H
L
Ordering Information  
L
H
L
PART  
NUMBER  
TEMPERATURE SCREENING  
RANGE LEVEL  
H
H
L
PACKAGE  
H
L
o
o
HCTS02DMSR -55 C to +125 C Intersil Class  
S Equivalent  
14 Lead SBDIP  
NOTE: L = Logic Level Low, H = Logic level High  
o
o
HCTS02KMSR -55 C to +125 C Intersil Class  
S Equivalent  
14 Lead Ceramic  
Flatpack  
Functional Diagram  
An  
o
HCTS02D/  
Sample  
+25 C  
Sample  
Sample  
Die  
14 Lead SBDIP  
(2, 5, 8, 11)  
Yn  
o
HCTS02K/  
Sample  
+25 C  
14 Lead Ceramic  
Flatpack  
(1, 4, 10, 13)  
Bn  
o
HCTS02HMSR  
+25 C  
Die  
(3, 6, 9, 12)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc.  
Spec Number 518841  
File Number 2137.2  
Copyright © Intersil Americas Inc. 2002. All Rights Reserved  
1

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