Datasheet > HCR1C60

HCR1C60

更新时间： 2024-02-29 09:56:20

品牌	Logo	应用领域
华汕 - HUASHAN		可控硅整流器
页数	文件大小	规格书
3页	720K
描述
Silicon Controlled Rectifier

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HCR1C60 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HCR1C60

Silicon Controlled Rectifier

█ Features

* Repetitive Peak Off-State Voltage : 600V

* R.M.S On-State Current(I_T(RMS)=1A)

* Low On-State Voltage (1.2V(Typ.)@ I_TM

)

█ General Description

Sensitive triggering SCR is suitable for the application where

gate current limited such as small motor control, gate driver

for large SCR, sensing and detecting circuits.

█ Absolute Maximum Ratings（T_a=25℃ unless otherwise specified）

T_{s t g}— — Storage Temperature ------------------------------------------------------ -40~150℃

T_j— — Operating Junction Temperature --------------------------------------------------- 125℃

V_DRM— — Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V

IT（RMS）— — R.M.S On-State Current（180º Conduction Angles）------------------------------------------1.0A

I_T(AV)— — Average On-State Current (Half Sine Wave : T_C= 45 °C ) ------------------------------------------0.8A

ITSM — — Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) ------------------------- 10A

I²t — — Circuit Fusing Considerations(t = 8.3ms) ----------------------------------------------------------- 0.9A²s

P_GM— — Forward Peak Gate Power Dissipation (T_a=25℃)------------------------------------------------- 0.5W

P_G(AV)— — Forward Average Gate Power Dissipation (T_a=25℃,t=8.3ms) ---------------------------------0.1W

I_FGM— — Forward Peak Gate Current ------------------------------------------------------------------------------ 0.2A

V_RGM— — Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V

12 3

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