Datasheet > HC8550S

HC8550S

更新时间： 2024-09-27 05:34:59

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	131K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HC8550S 数据手册

PNP S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HC8550S

█ APPLICATIONS

Audio Frequency Amplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg——Storage Temperature………………………… -55~150℃

T_j——Juncttion Temperature…………………………………150℃

P_C——Collector Dissipation…………………………………625W

V_CBO——Collector-Base Voltage………………………………-40V

V_CEO——Collector-Emitter Voltage……………………………-20V

V_EBO——Emitter-Base Voltage………………………………-5V

I_C——Collector Current………………………………………-500mA

TO-92

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

ICBO

IEBO

Collector Cut-off Current

Emitter Cut-off Current

-0.1 μA VCB=-25V, IE=0

-0.1 μA VEB=-3V, IC=0

HFE（1） DC Current Gain

HFE（2）

500

VCE=-1V, IC=-50mA

VCE=-1V, IC=-500mA

IC=-500mA, IB=-50mA

IC=-500mA,IB=-50mA

V_CE=-1V, I_C=-10mA

IC=-100μA，IE=0

IC=-2mA，IB=0

IE=100μA，IC=0

VCE(sat） Collector- Emitter Saturation Voltage

VBE(sat) Base- Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter- Base Breakdown Voltage

-0.6

-1.2

-0.6

-40

-20

-5

-0.73 V

█ hFE Classification

85—160

120—200

160—300

270—500

中文翻译

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