Datasheet > HC5027H

HC5027H

更新时间： 2024-09-26 05:34:59

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
3页	116K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HC5027H 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HC5027H

█ APPLICATIONS

High Voltage And High Reliability .

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-3P

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation（Tc=25℃）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 65W

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1100V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 800V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 7V

I_C— — Collector Current（DC）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 3A

I_CP— — Collector Curren（t Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 10A

Ib— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1.5A

1―Base，B

2―Collector，C

3―Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min Typ Max Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

I_C=1mA, I =0

1100

800

I_C=5mA, I =0

I_E=1mA，I_C=0

V_CB=800V, I_E=0

V_EB=5V, I_C=0

ICBO

IEBO

Collector Cut-off Current

Emitter Cut-off Current

10 μA

HFE（1） DC Current Gain

V_CE=5V, I_C=0.2A

V_CE=5V, I_C=1A

I_C=1.5A, I_B=0.3A

V_CE=10V,I_C=0.2A

HFE（2） DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

1.5 V

MHz

Current Gain-Bandwidth Product

Output Capacitance

Cob

pF V_CB=10V, I_E=0，f=1MHz

█ hFE Classification

10— 20

15— 30

20— 40

12 3

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