Datasheet > HC1417

HC1417

更新时间： 2024-09-21 05:34:59

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	33K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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HC1417 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HC1417

█ APPLICATIONS

High Frequency Amplifier Application.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 625mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 20V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 15V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 3V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 30mA

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

V IC=100μA，IE=0

V IC=1mA，IB=0

V IE=100μA，IC=0

ICBO

IEBO

HFE

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

0.1 μA VCB=10V, IE=0

0.1 μA VEB=3V, IC=0

146

0.5

VCE=6V, IC=1mA

VCE(sat) Collector- Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

V IC=10mA, IB=1mA

1.42 V IC=10mA, IB=1mA

MHz VCE=10V, IC=50mA

Current Gain-Bandwidth Product

Output Capacitance

Noise Figure

100 300

1.4

Cob

pF VCB=10V,IE=0，f=1MHz

dB V_CE=6V,I_C=1mA,R_G=50O

5.5

█ hFE Classification

54— 80

72--108

97--146

中文翻译

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