Datasheet > HC114T

HC114T

更新时间： 2024-02-15 13:19:04

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	242K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HC114T 数据手册

NPN DIGITAL T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HC114T

█ APPLICATIONS

Switching Circuit，Interface Circuit.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100mA

TO-92S

1―Emitter，E

2―Collector,C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

I_C=50μA, I_E=0

I_C=1mA, I_B=0

I_E=50μA，I_C=0

V_CB=50V, I_E=0

ICBO

IEBO

HFE

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

0.1 μA

600

V_EB=4V, I_C=0

V_CE=5V, I_C=1mA

I_C=10mA, I_B=1mA

V_CE=5V, I_C=0.1mA

V_CE=0.2V, I_C=10mA

100

VCE(sat) Collector- Emitter Saturation Voltage

0.3 V

Input Off Voltage

VI（off）

VI（on）

0.4 0.55 0.8 V

0.7 1.2 3.0 V

Input On Voltage

Input Resistor

7.0 10

250

13 KΩ

MHz

Current Gain-Bandwidth Product

Output Capacitance

V_CE=10V,I_C=5mA

Cob

3.7

V_CB=10V,f=1MHz

中文翻译

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