Datasheet > HC114E

HC114E

更新时间： 2024-02-11 13:12:27

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	512K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HC114E 数据手册

NPN DIGITAL T R AN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HC114E

█ APPLICATIONS

Switching Circuit，Interface Circuit.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92S

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 10V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

1―Emitter，E

2―Collector，C

3―Base，B

Symbol

Characteristics

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Min

Typ

Max

Unit

Test Conditions

BVCBO

BVCEO

ICBO

I_C=10μA, I =0

I_C=0.1mA, I =0

V_CB=40V, I_E=0

0.1 μA

0.5 μA

ICEO

Collector Cut-off Current

V_CE=40V, I_B=0

IEBO

Emitter Cut-off Current

V_EB=5V, I_C=0

195 250 360 μA

HFE

DC Current Gain

V_CE=5V, I_C=5mA

I_C=10mA, I_B=0.5mA

V_CE=5V, I_C=0.1mA

V_CE=0.2V, I_C=10mA

VCE(sat)

Collector- Emitter Saturation Voltage

0.1 0.3 V

VI（off） Input Off Voltage

VI（on） Input On Voltage

0.8 1.1 1.5 V

1.0 2.0 4.0 V

7.0 10 13 Kohm

0.8 1.0 1.2

R2/R1

Input Resistor

Resistor Ratio

Current Gain-Bandwidth Product

250

MHz

V_CE=-10V, I_C=-5mA

中文翻译

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