Datasheet > HBU406

HBU406

更新时间： 2024-10-27 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	26K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HBU406 数据手册

Spec. No. : HE6716

Issued Date : 1996.02.01

Revised Date : 2001.05.28

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HBU406

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBU406 is designed for use in TV Horizontal output and

Switching applications.

Features

• High Breakdown Voltage

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ..................................................................................... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 60 W

• Maximum Voltages and Currents (Ta=25°C)

VCEO Collector to Emitter Voltage ................................................................................... 200 V

VEBO Emitter to Base Voltage ............................................................................................. 6 V

IC Collector Current ............................................................................................................. 7 A

IB Base Current .................................................................................................................... 4 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100mA, IB=0

VCE=400V

VEB=6V, IC=0

IC=5A, IB=0.5A

IC=500mA, VCE=5V

IC=2A, VCE=5V

IC=5A, VCE=5V

*BVCEO

ICES

IEBO

*VCE(sat)

*VBE(sat)

*hFE1

200

1.2

*hFE2

*hFE3

125

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank

Range

30-45

35-85

75-125

HBU406

HSMC Product Specification

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