Datasheet > HBS170

HBS170

更新时间： 2024-10-28 05:34:55

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
4页	391K
描述
N-Channel Enhancement Mode Field Effect Transistor

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HBS170 数据手册

Shantou Huashan Electronic Devices Co.,Ltd.

HBS170

N-Channel Enhancement Mode Field Effect Transistor

█ General Description

TO-92

These products have been designed to minimize on-state resistance

While provide rugged, reliable, and fast switching performance. They

can be used in most applications requiring up to 500mA DC. These

products are particularly suited for low voltage, low current applications

such as small servo motor control, power MOSFET gate drivers, and

other switching applications.

1- D 2-G 3-S

█ Features

ꢀ

High density cell design for low Rds(on).

ꢀ

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

█ Maximum Ratings（Ta=25℃ unl ess ot her wi se speci f i ed）

T_stg——Storage Temperature ------------------------------------------------------ - 55~150℃

T_j——Operating Junction Temperature ---------------------------------------------- - 55~150℃

V_DSS—— Drain-Source Voltage ---------------------------------------------------------- 60V

V_DGR—— Drain-Gate Voltage (R_GS≤1MΩ) --------------------------------------------------------- 60V

V_GSS—— Gate-Source Voltage ------------------------------------------------------------------------ ±20V

I_D—— Drain Current (Continuous) ---------------------------------------------------------------- 500mA

P_D—— Maximum Power Dissipation ------------------------------------------------------------ 0.83W

█ Electrical Characteristics（Ta=25℃ unl ess ot her wi se speci f i ed）

Symbol

Items

Min. Typ. Max. Unit

Conditions

BV_DSS

I_DSS

I_GSSF

V_GS(TH)

R_DS(ON)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

V_GS=0V, I_D=100uA

0.5

3.0

uA V_DS=25V, V_GS=0V

Ω

Gate – Body Leakage, Forward

V_GS=15V , V_DS=0V

V_DS= V_GS, ID=1mA

V_GS=10V, ID=200mA

V_DS=10V, ID=200mA

Gate Threshold Voltage

0.8

Static Drain-Source On-Resistance

Forward Transconductance

Input Capacitance

g_FS

320

Ciss

V_DS= 10 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Turn - On Time

Crss

ton

_DD= 25 V, I_D= 200 m A,

V_GS= 10 V, R_GEN= 25 Ω

toff

Turn - Off Time

12 3 4

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