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HBNP3946S6R PDF预览

HBNP3946S6R

更新时间: 2024-02-02 08:05:13
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 晶体晶体管
页数 文件大小 规格书
5页 152K
描述
General Purpose NPN / PNP Epitaxial Planar Transistors

HBNP3946S6R 数据手册

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Spec. No. : C902S6R  
Issued Date : 2003.03.18  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/5  
General Purpose NPN / PNP Epitaxial Planar Transistors  
(dual transistors)  
HBNP3946S6R  
Features  
Includes a 2N3904 chip and 2N3906 chip in a SOT-363R package.  
Mounting possible with SOT-323 automatic mounting machines.  
Transistor elements are independent, eliminating interference.  
Mounting cost and area can be cut in half.  
Equivalent Circuit  
SOT-363R  
HBNP3946S6R  
Absolute Maximum Ratings (Ta=25°C)  
Limits  
TR2 (PNP)  
Parameter  
Symbol  
Unit  
TR1 (NPN)  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
60  
40  
6
-40  
-40  
-5  
V
V
V
200  
-200  
mA  
mW  
°C  
°C  
Power Dissipation  
Pd  
300(total)  
150  
*1  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
-55~+150  
Note: *1 200mW per element must not be exceeded.  
HBNP3946S6R  
CYStek Product Specification  

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