Datasheet > HBD681

HBD681

更新时间： 2024-10-28 05:34:51

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	143K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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HBD681 数据手册

N P N S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

HBD681

█ APPLICATIONS

Medium Power Linear switching.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-126F

T_stg——Storage Temperature………………………… -65~150℃

T_j——Junction Temperature……………………………… 150℃

P_C——Collector Dissipation（T_c=25℃）…………………… 40W

V_CBO——Collector-Base Voltage…………………………… 100V

V_CEO——Collector-Emitter Voltage………………………… 100V

V_EBO——Emitter-Base Voltage………………………………… 5V

I_C——Collector Current（Pulse）………………………………… 6A

I_C——Collector Curren（t DC）…………………………………… 4A

I_B——Base Current……………………………………………100mA

1―Emitter, E

2―Collector，C

3―Base，B

█ 电参数（ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

ICBO

IEBO

ICES

Collector Cut-off Current

Emitter Cut-off Current

Collector Cut-off Current

DC Current Gain

200 μA V_CB=100V, I_E=0

2 mA V_EB=5V, I_C=0

500 μA V_CE=100V, V_EB=0

V_CE=3V, I_C=1.5mA

*HFE

750

100

*VCE(sat) Collector- Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

2.5 V

I_C=1.5A, I_B=30mA

V_CE=3V, I_C=1.5A

I_C=50mA, I_B=0

2.5 V

VCEO(SUS) Collector-Emitter Sustaining Voltage

* Pulse Test:PW=300µS,Duty Cycie=1.5% Pulsed

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