Datasheet > HBD677

HBD677

更新时间： 2024-10-27 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	35K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HBD677 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	4 A
配置：	Single	最小直流电流增益 (hFE)：	750
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

HBD677 数据手册

Spec. No. : HE6620-B

Issued Date : 1994.07.22

Revised Date : 2000.10.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HBD677

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBD677 is designed for use as output devices in

complementary general purpose amplifier applications.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 20 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage...................................................................................... 60 V

BVCEO Collector to Emitter Voltage................................................................................... 60 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

IC Collector Current.............................................................................................................. 4 A

IB Base Current ................................................................................................................ 0.1 A

(Ta=25°C)

Electrical Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICEO

ICBO

IEBO

*VCE(sat)

*VBE(on)

*hFE

IC=1mA

IC=50mA

IE=100uA

VCB=30V

VCB=60V

VBE=5V

IC=1.5A, IB=30mA

IC=1.5A, VCE=3V

500

200

2.5

750

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

12 3

中文翻译

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