Datasheet > HBD438T

HBD438T

更新时间： 2024-10-27 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
3页	38K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

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技术参数
数据手册

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HBD438T 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	4 A	配置：	Single
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	3 MHz	Base Number Matches：	1

HBD438T 数据手册

Spec. No. : HT200206

Issued Date : 2001.04.01

Revised Date : 2002.02.08

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HBD438T

COMPLEMENTARY SILICON POWER TRANSISTORS

Description

The HBD438T is silison epitaxial-base PNP power transistor in TO-126

plastic package, intented for use in medium power linear and switching

applications. The complementary NPN type is HBD437T.

TO-126

Unit

Absolute Maximum Ratings (Ta=25°C)

Symbol

Parametor

Value

VCBO

VCES

VCEO

VEBO

Collector-Base Voltage (IE=0)

Collector-Emitter Voltage (VBE=0)

Collector-Emitter Voltage (IB=0)

Emitter-Base Voltage (IC=0)

Collector Current

-45

-5

-4

-7

-1

ICM

Collector Peak Current (t≤10ms)

Base Current

1.3

-55 to 150

150

°C

Tc=25°C

Total Dissipation at

Ta=25°C

Storage Temperature

Tstg

Max. Operating Junction Temperature

Thermal Data

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

°C/W

Electrical Characteristics (Ta=25°C, unless otherwise specified)

Symbol

ICBO

Parameter

Test Conditions

Min.

Typ.

Max.

-100

Unit

Collector Cut-off Current (IE=0) VCB=-45V

Collector Cut-off Current

ICES

IEBO

VCE=-45V

-100

-1

(VBE=0)

Emitter Cut-off Current (IC=0)

Collector-Emitter Sustaining

Voltage (IB=0)

Collector-Emitter Saturation

Voltage

VEB=-5V

*VCEO(sus)

IC=-100mA

-45

*VCE(sat)

*VBE

IC=-2A, IB=-0.2A

-0.2

-0.6

IC=-10mA,VCE=-5V

IC=-2A, VCE=-1V

IC=-10mA, VCE=-5V

IC=-0.5A, VCE=-1V

IC=-2A, VCE=-1V

-0.58

Base-Emitter Voltage

130

140

-1.2

*hFE

DC Current Gain

Transition Frequency

IC=-0.25A, VCE=-1V

MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HBD438T

HSMC Product Specification

12 3

中文翻译

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