5秒后页面跳转
HBD437D PDF预览

HBD437D

更新时间: 2024-10-28 03:41:15
品牌 Logo 应用领域
HSMC 晶体晶体管
页数 文件大小 规格书
4页 46K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

HBD437D 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):4 A配置:Single
最小直流电流增益 (hFE):30最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):20 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):3 MHzBase Number Matches:1

HBD437D 数据手册

 浏览型号HBD437D的Datasheet PDF文件第2页浏览型号HBD437D的Datasheet PDF文件第3页浏览型号HBD437D的Datasheet PDF文件第4页 
Spec. No. : HD200201  
Issued Date : 2001.04.01  
Revised Date : 2005.08.16  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HBD437D  
COMPLEMENTARY SILICON POWER TRANSISTORS  
Description  
The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic  
package, intented for use in medium power linear and switching applications. The  
complementary PNP type is HBD438D.  
TO-126ML  
Absolute Maximum Ratings (TA=25°C)  
Symbol  
VCBO  
VCES  
VCEO  
VEBO  
IC  
Parametor  
Collector-Base Voltage (IE=0)  
Collector-Emitter Voltage (VBE=0)  
Collector-Emitter Voltage (IB=0)  
Emitter-Base Voltage (IC=0)  
Collector Current  
Value  
Unit  
V
45  
45  
V
45  
V
5
V
4
A
ICM  
7
A
Collector Peak Current (t10ms)  
Base Current  
IB  
1
20  
A
W
W
°C  
°C  
TC=25°C  
Total Dissipation at  
TA=25°C  
PD  
1.5  
Tstg  
TJ  
Storage Temperature  
-55 to 150  
150  
Max. Operating Junction Temperature  
Thermal Data  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
5
°C/W  
°C/W  
83  
Electrical Characteristics (TA=25°C, unless otherwise specified)  
Symbol  
ICBO  
Parameter  
Test Conditions  
VCB=45V  
Min.  
Typ.  
Max.  
Unit  
Collector Cut-off Current (IE=0)  
Collector Cut-off Current (VBE=0)  
Emitter Cut-off Current (IC=0)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Saturation Voltage  
-
-
-
100  
uA  
uA  
mA  
V
ICES  
VCE=45V  
-
100  
IEBO  
VEB=5V  
-
-
1
*VCEO(sus)  
*VCE(sat)  
IC=100mA, IB=0  
IC=2A, IB=0.2A  
IC=10mA,VCE=5V  
IC=2A, VCE=1V  
IC=10mA, VCE=5V  
IC=0.5A, VCE=1V  
IC=2A, VCE=1V  
IC=0.5A, VCE=1V  
IC=0.25A, VCE=1V  
45  
-
-
0.4  
0.58  
-
-
0.6  
-
V
-
V
*VBE  
Base-Emitter Voltage  
-
1.2  
-
V
30  
85  
40  
-
130  
140  
-
*hFE  
DC Current Gain  
-
-
*hFE1/hFE2  
fT  
Matched Pair  
-
1.4  
-
Transition Frequency  
3
-
MHz  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HBD437D  
HSMC Product Specification  

与HBD437D相关器件

型号 品牌 获取价格 描述 数据表
HBD437T HSMC

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
HBD438T HSMC

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
HBD675 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HBD677 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HBD678 HSMC

获取价格

NPN EPITAXIAL PLANAR TRANSISTOR
HBD681 HUASHAN

获取价格

NPN SILICON TRANSISTOR
HBD682 HUASHAN

获取价格

PNP SILICON TRANSISTOR
HBDGC4N DIALIGHT

获取价格

SafeSite? Series LED High Bay
HBDGC5N DIALIGHT

获取价格

SafeSite? Series LED High Bay
HBDGCMN DIALIGHT

获取价格

SafeSite? Series LED High Bay