Datasheet > HBD237

HBD237

更新时间： 2024-10-27 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	27K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HBD237 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	2 A	配置：	Single
最小直流电流增益 (hFE)：	25	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	25 W
子类别：	Other Transistors	表面贴装：	NO
标称过渡频率 (fT)：	3 MHz	Base Number Matches：	1

HBD237 数据手册

Spec. No. : HE6622-A

Issued Date : 1994.09.08

Revised Date : 2000.10.01

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HBD237

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBD237 is designed for medium power linear and switching

applications.

(Ta=25°C)

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -50 ~ +150 °C

Junction Temperature ................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C) .................................................................................... 25 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... 100 V

BVCEO Collector to Emitter Voltage................................................................................... 80 V

BVEBO Emitter to Base Voltage........................................................................................... 5 V

BVCER Emitter to Base Voltage....................................................................................... 100 V

IC Collector Current.............................................................................................................. 2 A

IC Collector Current (Pulse).................................................................................................. 6 A

(Ta=25°C)

Electrical Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

*BVCEO

BVEBO

ICBO

100

IC=1mA

IC=100mA

IE=100uA

VCB=100V

VBE=5V

IC=1A, IB=0.1A

IC=1A, VCE=2V

IC=150mA, VCE=2V

IC=1A, VCE=2V

VCE=10V, IC=250mA, f=100MHz

100

0.6

1.3

IEBO

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HSMC Product Specification

中文翻译

下载PDF

与HBD237相关器件

型号	品牌	获取价格	描述	数据表
HBD238	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HBD241C	HUASHAN	获取价格	NPN SILICON TRANSISTOR
HBD2C4M	DIALIGHT	获取价格	SafeSite Series LED High Bay Fixture
HBD2C4N	DIALIGHT	获取价格	SafeSite? Series LED High Bay
HBD2C5M	DIALIGHT	获取价格	SafeSite? Series LED High Bay
HBD2C5N	DIALIGHT	获取价格	SafeSite? Series LED High Bay
HBD3C4G	DIALIGHT	获取价格	SafeSite Series LED High Bay Fixture
HBD3C4L	DIALIGHT	获取价格	SafeSiteÂ® Series LED High Bay
HBD3C5L	DIALIGHT	获取价格	SafeSiteÂ® Series LED High Bay
HBD427T	ETC	获取价格	NPN45V4A25W\|Bipolar Transistors