Datasheet > HBD136

HBD136

更新时间： 2024-10-27 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
PNP POWER TRANSISTORS

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技术参数
数据手册

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HBD136 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HBD136 数据手册

Spec. No. : Preliminary Data

Issued Date : 2001.08.01

Revised Date : 2001.08.24

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HBD136

PNP POWER TRANSISTORS

Description

PNP power transistor in a TO-126 plastic package. NPN complements:

HBD135

Features

• High Current (max. 1.5A)

• Low Voltage (max. 80V)

Applications

General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.

Limiting Values

Symbol

Parametor

Conditions

Min.

Max.

Unit

VCBO

VCEO

VEBO

ICM

IBM

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Peak Collector Current

Peak Base Current

Open Emitter

Open Base

Open Collector

-45

-5

-1.5

-2

-1

1.2

°C

Ta=25°C

Tc=25°C

Total Dissipation at

Tstg

Tamb

Storage Temperature

Junction Temperature

Operating Ambient Temperature

-65

150

(Tj=25°C, unless otherwise specified)

Electrical Characteristics

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

ICBO

IEBO

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Voltage

IE=0, VCB=-30V

IC=0, VEB=-5V

-100 nA

*VCE(sat)

*VBE

IC=-500mA, IB=-50mA

-0.5

IC=-500mA, VCE=-2V

VCE=-2V, IC=-5mA

VCE=-2V, IC=-150mA

VCE=-2V, IC=-500mA,

IC=-50mA, VCE=-5V, f=100MHz

-1

hFE

DC Current Gain

250

Transition Frequency

DC current gain ratio of

the complementary pairs

230

MHz

*hFE1/hFE2

|IC|=150mA, |VCE|=2V

1.6

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HBD136

HSMC Product Specification

12 3

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