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HBC337

更新时间： 2024-09-25 22:33:15

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	41K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HBC337 数据手册

Spec. No. : HE6415

Issued Date : 1992.11.25

Revised Date : 2002.02.05

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HBC337

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HBC337 is designed for driver and output-stage of audio

amplifiers.

TO-92

Features

• High DC Current Gain: 100-600 at IC=100mA,VCE=1V

• Complementary to HBC327

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 50 V

VCEO Collector to Emitter Voltage...................................................................................... 45 V

VEBO Emitter to Base Voltage.............................................................................................. 5 V

IC Collector Current ....................................................................................................... 800 mA

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=10mA, IB=0

IE=10uA, IC=0

VCB=45V, IE=0

IB=500mA, IB=50mA

IC=300mA, VCE=1V

VCE=1V, IC=100mA

VCE=1V, IC=300mA

VCE=5V, IC=10mA, f=100MHZ

VCB=10V, IE=0, f=1MHZ

BVCBO

BVCEO

BVEBO

ICBO

*VCE(sat)

VBE(on)

*hFE1

*hFE2

100

0.7

1.2

600

210

MHZ

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification of hFE1

Rank

160-400

Range

100-250

250-600

HBC337

HSMC Product Specification

12 3 4

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