Spec. No. : HE6413
Issued Date : 1993.01.15
Revised Date : 2002.02.05
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
HBC327
PNP EPITAXIAL PLANAR TRANSISTOR
Description
This HBC327 is designed for driver and output-stages of audio
amplifiers.
TO-92
Features
• High DC Current Gain: 100-600 at IC=100mA,VCE=1V
• Complementary to HBC337
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-100uA, IC=0
VCB=-30V, IE=0
BVCBO
BVCEO
BVEBO
ICBO
-50
-45
-5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
-100
-100
600
-
-0.7
-1.2
-
IEBO
-
VEB=-5V, IC=0
*hFE1
*hFE2
*VCE(sat)1
VBE(on)
fT
100
40
-
-
-
VCE=-1V, IC=-100Ma
VCE=-1V, IC=-300mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA,
VCE=-5V, IC=-10mA, f=100MHZ
VCB=-10V, f=1MHZ, IC=0
V
V
MHZ
PF
100
4
Cob
-
-
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
Range
16
100-250
25
160-400
40
250-600
HBC327
HSMC Product Specification