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HBAT54A PDF预览

HBAT54A

更新时间: 2024-01-25 03:30:32
品牌 Logo 应用领域
HSMC 肖特基二极管
页数 文件大小 规格书
3页 27K
描述
Silicon Schottky Barrier Double Diodes

HBAT54A 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
最大非重复峰值正向电流:0.6 A最高工作温度:125 °C
最大重复峰值反向电压:30 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

HBAT54A 数据手册

 浏览型号HBAT54A的Datasheet PDF文件第2页浏览型号HBAT54A的Datasheet PDF文件第3页 
Spec. No. : HE6854  
Issued Date : 1997.04.28  
Revised Date : 2002.10.24  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HBAT54\A\C\S  
Description  
Silicon Schottky Barrier Double Diodes  
Features  
These diodes feature very low turn-on voltage and fast switching.  
There is a PN junction guard ring against excessive voltage such as  
electronics attic discharges protects these devices.  
SOT-23  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature.............................................................................................. -65~+125 °C  
Junction Temperature.................................................................................................... +125 °C  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 230 mW  
Maximum Voltages and Currents (Ta=25°C)  
Repetitive Peak Reverse Voltage ........................................................................................ 30 V  
Forward Continuous Current .......................................................................................... 200 mA  
Repetitive Peak Forward Current .................................................................................. 300 mA  
Surge Forward Current (tp<1s)....................................................................................... 600 mA  
Characteristics (Ta=25°C)  
Characteristic  
Symbol  
Condition  
Min.  
Max.  
Unit  
Reverse breakdown Voltage  
V(BR)R IR=10uA  
30  
-
-
V
VF(1)  
VF(2)  
VF(3)  
VF(4)  
VF(5)  
IR  
IF=0.1mA  
IF=1mA  
240  
320  
400  
500  
1000  
2.0  
mV  
mV  
mV  
mV  
mV  
uA  
-
Forward Voltage  
IF=10mA  
-
IF=30mA  
-
IF=100mA  
VR=25V  
-
Reverse Current  
Total Capacitance  
-
CT  
VR=1V, f=1MHz  
-
10  
pF  
IF=IR=10mA RL=100Ω  
measured at IR=1mA  
Reverse Recovery Time  
Trr  
-
5
nS  
HBAT54, HBAT54A, HBAT54C, HBAT54S  
HSMC Product Specification  

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