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HBAS16 PDF预览

HBAS16

更新时间: 2024-01-02 22:27:19
品牌 Logo 应用领域
HSMC 二极管开关
页数 文件大小 规格书
3页 41K
描述
HIGH-SPEED SWITCHING DIODE

HBAS16 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
最大非重复峰值正向电流:1 A元件数量:1
最高工作温度:150 °C最大输出电流:0.25 A
最大重复峰值反向电压:75 V最大反向恢复时间:0.006 µs
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

HBAS16 数据手册

 浏览型号HBAS16的Datasheet PDF文件第2页浏览型号HBAS16的Datasheet PDF文件第3页 
Spec. No. : HE6833  
Issued Date : 1994.05.27  
Revised Date : 2002.10.24  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HBAS16  
HIGH-SPEED SWITCHING DIODE  
Description  
The HBAS16 is designed for high-speed switching application in  
hybrid thick and thin-film circuits.  
The devices is manufactured by the silicon epitaxial planar process  
and packed in a plastic surface mount package.  
SOT-23  
Features  
Small SMD Package (SOT-23)  
Low Forward Voltage  
Fast Reverse Recovery Time  
Small Total Capacitance  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature.............................................................................................. -65~+150 °C  
Junction Temperature.................................................................................................... +150 °C  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 200 mW  
Maximum Voltages and Currents (Ta=25°C)  
Reverse Voltage .................................................................................................................. 75 V  
Repetitive Reverse Voltage ................................................................................................. 85 V  
Forward Current ............................................................................................................. 250 mA  
Repetitive Forward Current ........................................................................................... 500 mA  
Forward Surge Current (1ms)................................................................................................ 1 A  
Characteristics (Ta=25°C)  
Characteristic  
Symbol  
Condition  
Min  
Max.  
Unit  
Reverse Breakdown Voltage  
V(BR) IR=100uA  
VF(1) IF=1mA  
VF(2) IF=10mA  
VF(3) IF=50mA  
VF(4) IF=150mA  
75  
-
-
-
-
-
V
715  
855  
1000  
1250  
1
MV  
mV  
mV  
mV  
uA  
Forward Voltage  
Reverse Current  
Total Capacitance  
IR  
VR=75V  
-
-
CT  
VR=0, f=1MHZ  
2
pF  
IF=IR=10mA, RL=100Ω,  
measured at IR=1mA  
Reverse Recovery Time  
Trr  
-
6
nS  
HBAS16  
HSMC Product Specification  

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