Datasheet > HB56UW3272ETK-F

HB56UW3272ETK-F

更新时间： 2024-02-23 05:46:43

品牌	Logo	应用领域
尔必达 - ELPIDA		动态存储器
页数	文件大小	规格书
27页	212K
描述
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)

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HB56UW3272ETK-F 数据手册

HB56UW3272ETK-F

256MB Buffered EDO DRAM DIMM

32-Mword × 72-bit, 4k Refresh, 2 Bank Module

(36 pcs of 16M × 4 components)

E0100H10 (1st edition)

(Previous ADE-203-1124A (Z))

Jan. 31, 2001

Description

The HB56UW3272ETK belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

developed an optimized main memory solution for 4 and 8-byte processor applications. The

HB56UW3272ETK is 32 M × 72 Dynamic RAM Module, mounted 36 pieces of 64-Mbit DRAM

(HM5165405) sealed in TSOP package and 2 pieces of 16-bit line driver sealed in TSSOP package. The

HB56UW3272ETK offers Extended Data Out (EDO) Page Mode as a high speed access mode.An outlineof

the HB56UW3272ETK is 168-pin socket type package (dual lead out). Therefore, the HB56UW3272ETK

makes high density mounting possible without surface mount technology. The HB56UW3272ETK provides

common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module

board.

Features

•

168-pin socket type package (Dual lead out)

Outline : 133.35 mm (Length) × 53.34 mm (Height) × 4.00 mm (Thickness)

Lead pitch : 1.27 mm

•

Single 3.3 V supply: 3.3 ± 0.3V

High speed

Access time: t_RAC= 50 ns/60 ns (max)

Access time: t_CAC= 18 ns/20 ns (max)

Low power dissipation

•

Active mode: 8.78 W/7.49 W (max)

Standby mode (TTL): 295.2 mW (max)

JEDEC standard outline buffered 8-byte DIMM

Buffered input except RAS and DQ

4-byte interleave enabled, dual address input (A0/B0)

EDO page mode capability

•

This Product become EOL in August, 2005.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

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