HAT3021R

更新时间： 2024-11-25 03:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
11页	146K
描述
Silicon N/P Channel Power MOS FET Power Switching

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数据手册

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HAT3021R 数据手册

HAT3021R

Silicon N/P Channel Power MOS FET

Power Switching

REJ03G0415-0200

Rev.2.00

Oct.06.2004

Features

•

Capable of 4.5 V gate drive

Low drive current

High density mounting

Outline

SOP-8

7 8

D D

5 6

D D

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

S 3

Nch

Pch

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Symbol

Unit

Nch

Pch

–80

Drain to source voltage

Gate to source voltage

Drain current

V_DSS

V_GSS

I_D

±20

3.4

±20

–2.6

–15.6

–2.6

1.5

Note1

Drain peak current

I_D(pulse)

20.4

3.4

Body-drain diode reverse drain current

Channel dissipation

I_DR

Pch ^Note2

Tch

1.5

°C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

Rev.2.00, Oct.06.2004, page 1 of 10

12 3 4 5 6 7...11

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