HAT3015T

更新时间： 2024-11-25 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	88K
描述
Silicon N/P Channel Power MOS FET High Speed Power Switching

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HAT3015T 数据手册

HAT3015T

Silicon N/P Channel Power MOS FET

High Speed Power Switching

REJ03G0405-0200

Rev.2.00

Sep.07.2004

Features

•

Low on-resistance

Capable of 4 V gate drive

High density mounting

Outline

TSSOP-8

1, 8

3, 6

4, 5

2, 7

Drain

Source

Gate

S 3

S 6

MOS1

Nch

MOS2

Pch

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Drain to Source voltage

Gate to Source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Nch

200

±15

0.5

Pch

Unit

–200

±15

–0.25

–1

Note1

Drain peak current

I_D(pulse)

Body-Drain diode reverse drain current

Channel dissipation

I_DR

0.5

–0.25

Pch ^Note2

Pch ^Note3

Tch

°C

1.5

150

1.5

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

Rev.2.00, Sep.07.2004, page 1 of 3

12 3 4

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