HAT3015R

更新时间： 2024-11-25 07:02:47

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	64K
描述
Silicon N/P Channel Power MOS FET High Speed Power Switching

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HAT3015R 数据手册

HAT3015R

Silicon N/P Channel Power MOS FET

High Speed Power Switching

REJ03G1368-0400

Rev.4.00

Apr 04, 2006

Features

•

Low on-resistance

Capable of 4 V gate drive

High density mounting

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

7 8

D D

5 6

D D

1, 3

2, 4

Source

Gate

5, 6, 7, 8 Drain

MOS1

Nch

MOS2

Pch

Absolute Maximum Ratings

(Ta = 25°C)

Ratings

Item

Symbol

Unit

Nch

200

±15

0.5

Pch

–200

±15

–0.25

–1

Drain to source voltage

Gate to source voltage

Drain current

V_DSS

V_GSS

I_D

Note1

Drain peak current

I_D(pulse)

Body-drain diode reverse drain current

Channel dissipation

I_DR

Pch ^Note2

Pch ^Note3

Tch

0.5

1.3

–0.25

1.3

°C

Channel temperature

Storage temperature

150

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s

Rev.4.00 Apr 04, 2006 page 1 of 3

12 3 4

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