Document Number: MRFE6VP61K25H
Rev. 4, 3/2013
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
MRFE6VP61K25HR6
MRFE6VP61K25HSR5
MRFE6VP61K25GSR5
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
1.8--600 MHz, 1250 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Volts, IDQ = 100 mA
P
(W)
f
G
(dB)
D
(%)
out
ps
Signal Type
(MHz)
Pulse
1250 Peak
230
24.0
74.0
(100 sec, 20% Duty Cycle)
CW
1250 CW
230
22.9
74.6
Application Circuits (1) — Typical Performance
Frequency
(MHz)
P
out
(W)
G
(dB)
ps
D
NI--1230--4H
MRFE6VP61K25HR6
Signal Type
(%)
81
85
84
80
78
30
66
27
40
CW
CW
1300
1300
1250
1100
1250
225
27
26
81.36
CW
27
87.5--108
144--148
170--230
352
CW
24
CW
26
DVB--T
25
NI--1230--4S
MRFE6VP61K25HSR5
Pulse
(200 sec,
1250
21.5
20% Duty Cycle)
352
500
CW
CW
1150
1000
20.5
18
68
58
1. Contact your local Freescale sales office for additional information on specific
circuit designs.
Load Mismatch/Ruggedness
NI--1230--4S GULL
MRFE6VP61K25GSR5
Frequency
(MHz)
P
(W)
Test
Voltage
out
Signal Type
VSWR
Result
230
Pulse
>65:1 at all
1500 Peak
(3 dB
50
No Device
Degradation
(100 sec, 20% Phase Angles
Duty Cycle)
Overdrive)
Gate A
Gate B
Drain A
Drain B
3
4
1
2
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
(Top View)
Integrated ESD Protection with Greater Negative Gate--Source Voltage Range
for Improved Class C Operation
Note: The backside of the package is the
source terminal for the transistor.
Characterized with Series Equivalent Large--Signal Impedance Parameters
Figure 1. Pin Connections
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.
Freescale Semiconductor, Inc., 2010--2013. All rights reserved.
MRFE6VP61K25HR6 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5
RF Device Data
Freescale Semiconductor, Inc.
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