S8381-512Q

更新时间： 2024-01-20 02:04:20

品牌	Logo	应用领域
HAMAMATSU		传感器换能器图像传感器
页数	文件大小	规格书
4页	148K
描述
NMOS linear image sensor NMOS linear image sensors with high IR sensitivity

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技术参数
数据手册

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S8381-512Q 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	阵列类型：	LINEAR
主体宽度：	10.4 mm	主体长度或直径：	31.75 mm
数据速率：	2 Mbps	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	65 °C	最低工作温度：	-40 °C
封装形状/形式：	RECTANGULAR	传感器/换能器类型：	IMAGE SENSOR,NMOS
光谱响应 (nm)：	200-1000	表面贴装：	NO
端接类型：	SOLDER	Base Number Matches：	1

S8381-512Q 数据手册

I M A G E S E N S O R

NMOS linear image sensor

S8380/S8381 series

NMOS linear image sensors with high IR sensitivity

S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image

sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm).

The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S8381 series also

have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128

(S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard

window material.

Features

Applications

High sensitivity in the IR and soft X-ray regions

Wide active area

Multichannel spectrophotometry

Image readout system

Pixel pitch: 50 µm (S8380 series)

25 µm (S8381 series)

Pixel height: 2.5 mm

High UV sensitivity with good stability

Low dark current and high saturation charge allow a long

integration time and a wide dynamic range at room temperature

Excellent output linearity and sensitivity spatial uniformity

Lower power consumption: 1 mW Max.

Start pulse and clock pulses are CMOS logic compatible

Figure 1 Equivalent circuit

Figure 2 Active area structure

START st

DIGITAL SHIFT REGISTER

(MOS SHIFT REGISTER)

END OF SCAN

ACTIVE VIDEO

CLOCK

ACTIVE

PHOTODIODE

Vss

SATURATION

CONTROL GATE

SATURATION

CONTROL DRAIN

DUMMY VIDEO

OXIDATION SILICON

DUMMY DIODE

KMPDC0020EA

N TYPE SILICON

P TYPE SILICON

S8380 SERIES: a=50 µm, b=45 µm

S8381 SERIES: a=25 µm, b=20 µm

KMPDA0125EA

Absolute maximum ratings

Parameter

■

Symbol

Vφ

Topr

Tstg

Value

-40 to +65

-40 to +85

Unit

°C

Input pulse (φ1, φ2, φst) voltage

Power consumption *¹

Operating temperature *²

Storage temperature

*1: Vφ=5.0 V

°C

*2: No condensation

12 3 4

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