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S10201-04

更新时间: 2024-01-29 09:06:53
品牌 Logo 应用领域
HAMAMATSU 传感器换能器图像传感器
页数 文件大小 规格书
11页 232K
描述
Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.

S10201-04 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N其他特性:SENSITIVITY 4 MICRO VOLT PER ELECTRON
阵列类型:FRAME主体宽度:9.91 mm
主体高度:3.3 mm主体长度或直径:40.64 mm
动态范围:61.5 dB水平像素:2048
外壳:CERAMIC安装特点:THROUGH HOLE MOUNT
最高工作温度:60 °C最低工作温度:-50 °C
输出类型:ANALOG VOLTAGE封装形状/形式:RECTANGULAR
像素大小:12X12 µm传感器/换能器类型:IMAGE SENSOR,CCD
光谱响应 (nm):200-1100最大供电电压:18 V
最小供电电压:12 V表面贴装:NO
端接类型:SOLDER垂直像素:128
Base Number Matches:1

S10201-04 数据手册

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I M A G E S E N S O R  
Back-thinned TDI-CCD  
S10200-02, S10201-04, S10202-08, S10202-16  
Operating the back-thinned CCD in TDI mode delivers high sensitivity.  
TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving  
object while transferring integrated signal charges synchronously with the object movement. This operation mode dramatically boosts sensitivity  
to high levels even when capturing fast moving objects. Our new TDI-CCD uses the back-thinned structure to achieve even higher quantum  
efficiency over a wide spectral range from UV to near IR region (200 to 1100 nm).  
Features  
Applications  
TDI mode gives high sensitivity  
Sequential imaging of high-speed moving samples  
Inspection tasks on electronic parts production line  
Semiconductor inspection  
High-speed, continuous image acquisition  
Back-thinned structure ensures high sensitivity from UV to  
near IR  
Flow cytometery  
Multiple ports for high-speed line rate  
TDI (Time Delay Integration) mode  
In FFT-CCD, signal charges in each line are vertically transferred during charge readout. TDI mode synchronizes this vertical  
transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number  
of vertical stages of the CCD pixels.  
In the TDI mode, the signal charges must be transferred in the same direction at the same speed as those of the object to be  
imaged. These speeds are expressed by the following equation:  
v = f × d  
v: Object moving speed, Charge transfer speed, f: Vertical transfer frequency, d: Pixel size  
In the right figure, when the first stage charges are transferred  
to the second stage, an additional charges are produced in the  
second stage by photoelectric conversion and accumulated.  
When this operation is continuously repeated until reaching  
the last stage M (the number of vertical stages), signal charges  
which are M times greater than the initial charges are accumu-  
lated. Since the signal charges on each line are output from  
the CCD horizontal shift register, a two-dimensional image  
can be continuously acquired. In this way the TDI mode  
achieves sensitivity which is M times higher than linear image  
Schematic diagram showing integrated exposure by  
TDI mode  
Time1  
Time2  
Time3  
FIRST STAGE  
·
·
·
·
·
LAST STAGE M  
sensors (S/N is improved  
times). The TDI mode also  
M
improves sensitivity variations compared to frame mode op-  
eration.  
KMPDC0139EA  
Selection guide  
Number of  
total pixels  
(H) × (V)  
Number of  
active pixels  
(H) × (V)  
Pixel size  
(µm)  
Number  
of ports  
Pixel rate  
(MHz/port)  
Line rate  
(kHz)  
Vertical  
transfer  
Type No.  
S10200-02  
S10201-04  
S10202-08  
S10202-16  
1040 × 128  
2080 × 128  
4160 × 128  
4224 × 128  
1024 × 128  
2048 × 128  
4096 × 128  
4096 × 128  
2
4
8
50  
12 × 12  
30  
Bidirectional  
16  
100  
Specifications  
Parameter  
Specification  
128  
TDI stage  
Anti-blooming  
Vertical clock  
Horizontal clock  
Output circuit  
Package  
FW × 100 (Min.)  
3 phases  
2 phases  
Two-stage MOSFET source follower  
Ceramic DIP  
Window  
Quarts glass  
PRELIMINARY DATA  
Jan. 2007  
1

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