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G9211-256S

更新时间： 2024-02-22 21:46:38
品牌 Logo 应用领域
HAMAMATSU 传感器换能器图像传感器时钟
页数 文件大小 规格书
4页 135K
描述
InGaAs linear image sensor

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G9211-256S 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N阵列类型：LINEAR
主体宽度：25.4 mm主体高度：7.25 mm
主体长度或直径：38.1 mm水平像素：256
JESD-609代码：e4主时钟：4 MHz
安装特点：PANEL MOUNT最大工作电流：100 mA
最高工作温度：70 °C最低工作温度：
输出范围：1.26-4.50V输出类型：DIGITAL VOLTAGE
封装形状/形式：RECTANGULAR像素大小：50X250 µm
传感器/换能器类型：IMAGE SENSOR,CMOS最大供电电压：5.1 V
最小供电电压：4.9 V表面贴装：NO
端子面层：Gold (Au) - with Nickel (Ni) barrier端接类型：SOLDER
垂直像素：256Base Number Matches：1

G9211-256S 数据手册

 浏览型号G9211-256S的Datasheet PDF文件第2页浏览型号G9211-256S的Datasheet PDF文件第3页浏览型号G9211-256S的Datasheet PDF文件第4页 
I M A G E S E N S O R  
InGaAs linear image sensor  
G9211 to G9214/G9205 to G9208 series  
Near infrared image sensors (0.9 to 1.67 µm / 2.55 µm)  
G9211 to G9214/G9205 to G9208 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry.  
These linear image sensors consist of an InGaAs photodiode array, a charge amplifier array, an offset compensation circuit, a shift register and a  
timing generator formed on a CMOS chip. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs  
photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the near  
infrared spectral range. The package is hermetically sealed for high reliability.  
Signal processing circuits on the CMOS chip allow selecting a feedback capacitance (Cf) of 10 pF or 0.5 pF by using an external voltage input.  
The image sensor operates over a wide dynamic range when Cf=10 pF and delivers high gain when Cf=0.5 pF.  
Features  
Applications  
Near infrared multichannel spectrophotometry  
Radiation thermometry  
Non-destructive inspection  
Wide dynamic range  
Low noise and low dark current  
Selectable gain  
Anti-saturation circuit  
CDS circuit *1  
Related products  
Offset compensation circuit  
Simple operation (by built-in timing generator) *2  
High resolution: 25 µm pitch (512 ch)  
Low cross-talk  
InGaAs multichannel detector head C8061-01, C8062-01  
Multichannel detector head controller C7557  
256 ch: 1 video line  
512 ch: 2 video lines  
ꢀ Selection guide  
Spectral  
response range  
Pixel pitch  
(µm)  
Pixel size  
[µm (H) × µm (V)]  
Defective  
pixel  
Number of  
pixels  
Type No.  
Cooling  
(µm)  
G9211-256S  
G9212-512S  
G9213-256S  
G9214-512S  
G9205-256W  
G9206-256W  
G9207-256W  
G9208-256W  
256  
512  
256  
512  
50  
25  
50  
25  
50 × 250  
25 × 250  
50 × 500  
25 × 500  
One-stage  
TE-cooled  
0.9 to 1.70  
1 % Max. *3  
0.9 to 1.85  
0.9 to 2.05  
0.9 to 2.25  
0.9 to 2.55  
Two-stage  
TE-cooled  
256  
50  
50 × 250  
5 % Max.  
*1: CDS (Correlated Double Sampling) circuit  
ꢀꢀSpectral response  
(Typ.)  
1.5  
A major source of noise in charge amplifiers is the reset noise gen-  
erated when the integration capacitance is reset. A CDS circuit greatly  
reduces this reset noise by holding the signal immediately after re-  
set to find the noise differential.  
T=25 ˚C  
T= -10 ˚C (G9208-256W: T= -20 ˚C)  
G9208-256W  
G9211 TO  
G9214 SERIES  
1.0  
0.5  
0
*2: Timing generator  
Different signal timings must be properly set in order to operate a  
shift register. In conventional image sensor operation, external PLDs  
(Programmable Logic Devices) are used to input the required timing  
signals. However, G9211 to G9214/G9205 to G9208 series image  
sensors internally generate all timing signals on the CMOS chip just  
by supplying CLK and RESET pulses.This makes it simple to set the  
timings.  
*3: Percentage of defective pixels  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
If your application requires sensors with no defective pixels, please  
select G9201 series.  
WAVELENGTH (µm)  
KMIRB0022EA  
1
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