Datasheet > HAD826

HAD826

更新时间： 2024-01-03 13:02:45

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	38K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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中文翻译

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技术参数
数据手册

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HAD826 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HAD826 数据手册

Spec. No. : HE6411-B

Issued Date : 199.03.06

Revised Date : 2000.09.01

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HAD826

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HAD826 is designed for general purpose amplifier and high

speed, medium-power switching applications.

Features

• Low Collector Saturation Voltage

• High Speed Switching

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature .......................................................................................... -55 ~ +150 °C

Junction Temperature..................................................................................... 150 °C Maximum

• Maximum Power Dissipations

Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage........................................................................................ 75 V

VCEO Collector to Emitter Voltage..................................................................................... 60 V

VEBO Emitter to Base Voltage............................................................................................. 6 V

IC Collector Current....................................................................................................... 600mA

(Ta=25°C)

Characteristics

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=10uA, IE=0

IC=10mA, IB=0

IE=10uA, IC=0

VCB=60V, IE=0

300

1.2

ICEX

IEBO

VCB=60V, VEB(OFF)=3V

VEB=3V, IC=0

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

*hFE1

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=10V, IC=100uA

VCE=10V, IC=1mA

VCE=10V, IC=10mA

VCE=10V, IC=150mA

VCE=10V, IC=500mA

VCE=1V, IC=150mA

IC=20mA, VCE=20V, f=100MHz

VCB=10V, F=1MHz

100

300

*hFE2

*hFE3

*hFE4

*hFE5

*hFE6

Cob

300

MHz

HSMC Product Specification

12 3

中文翻译

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