Datasheet > HAD825SP

HAD825SP

更新时间： 2024-02-06 07:37:40

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
2页	22K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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技术参数
数据手册

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HAD825SP 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

HAD825SP 数据手册

Spec. No. :Preliminary Data

Issued Date : 2000.10.01

Revised Date : 2001.05.01

Page No. : 1/2

HI-SINCERITY

MICROELECTRONICS CORP.

HAD825SP

NPN EPITAXIAL PLANAR TRANSISTOR

Features

Darlington Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature .......................................................................................... -55 ~ +150 °C

Junction Temperature................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) .............................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage........................................................................................ 80 V

VCES Collector to Emitter Voltage ..................................................................................... 55 V

VEBO Emitter to Base Voltage........................................................................................... 12 V

IC Collector Current ...................................................................................................... 600 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

IC=100uA, IE=0

IC=100uA, IB=0

IE=10uA, IC=0

VCB=60V, IE=0

VEB=10V, IC=0

BVCBO

BVCES

BVEBO

ICBO

IEBO

ICES

*VCE(sat)1

*VCE(sat)2

*VBE(on)

*hFE1

10K

125

100

500

1.2

1.5

VCE=50V, IB=0

IC=10mA, IB=0.01mA

IC=100mA, IB=0.1mA

IC=100mA, VCE=5V

IC=10mA, VCE=5V

IC=100mA, VCE=5V

VCE=5V, IC=10mA, f =100MHz

VCB=10V, f=1MHz

*hFE2

Cob

100K

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HAD825SP

HSMC Product Specification

中文翻译

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