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HAD825

更新时间: 2024-09-25 22:33:11
品牌 Logo 应用领域
HSMC 晶体晶体管局域网
页数 文件大小 规格书
3页 34K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

HAD825 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.6 A配置:DARLINGTON
最小直流电流增益 (hFE):10000最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):125 MHz

HAD825 数据手册

 浏览型号HAD825的Datasheet PDF文件第2页浏览型号HAD825的Datasheet PDF文件第3页 
Spec. No. : HE6406  
Issued Date : 1994.01.13  
Revised Date : 2002.03.06  
Page No. : 1/3  
HI-SINCERITY  
MICROELECTRONICS CORP.  
HAD825  
NPN EPITAXIAL PLANAR TRANSISTOR  
Features  
Darlington transistor.  
Absolute Maximum Ratings  
TO-92  
Maximum Temperatures  
Storage Temperature ........................................................................................... -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipations  
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage......................................................................................... 80 V  
VCES Collector to Emitter Voltage...................................................................................... 55 V  
VEBO Emitter to Base Voltage............................................................................................ 12 V  
IC Collector Current........................................................................................................ 600mA  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCES  
BVEBO  
ICBO  
IEBO  
ICES  
*VCE(sat)  
*VCE(sat)  
VBE(on)  
*hFE1  
*hFE2  
fT  
80  
55  
12  
-
-
-
-
-
-
10K  
10K  
125  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
nA  
V
IC=100uA  
IC=100uA  
IE=10uA  
VCB=60V  
VEB=10V  
VCE=60V  
IC=10mA, IB=0.01mA  
IC=100mA, IB=0.1mA  
IC=100mA, VCE=5V  
IC=10mA, VCE=5V  
IC=100mA, VCE=5V  
IC=10mA, VCE=5V f=100MHz  
VCB=10V, f=1MHz  
100  
100  
500  
1.2  
1.5  
1.5  
-
V
V
100K  
-
MHz  
pF  
Cob  
8
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
HAD825  
HSMC Product Specification  

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