Datasheet > HA94

HA94

更新时间： 2024-01-02 21:00:00

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	98K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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HA94 数据手册

PN P S I LI C O N TRAN S I STO R

Shantou Huashan Electronic Devices Co.,Ltd.

HA94

█ HIGH VOLTAGE TRANSISTOR

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 625mW

1―Emitter，E

2―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -400V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -400V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6V

3―Collector，C

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -300mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BVCBO

BVCES

BVEBO

ICBO

-400

-6

I_C=-100μA, I_E=0

I_C=-100μA, V_BE=0

I_E=-10μA，I_C=0

-100 nA

V_CB=-300V, I_E=0

Emitter-Base Cut-off Current

Collector Cut-off Current

IEBO

V_EB=-4V, I_C=0

ICES

-1

μA

V_CE=-400V, V_BE=0

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-50mA

V_CE=-10V, I_C=-100mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B=-1mA

HFE（1）

HFE（2）

HFE（3）

HFE（4）

VCE(sat1)

VCE(sat2)

VBE(sat)

Cob

DC Current Gain

300

Collector- Emitter Saturation Voltage

-0.5 V

-0.75 V

Base-Emitter Saturation Voltage

Output Capacitance

pF V_CB=20V, I_E=0，F=1MHz

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