Datasheet > HA8550

HA8550

更新时间： 2024-11-28 22:33:11

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
3页	39K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HA8550 数据手册

Spec. No. : HE6108

Issued Date : 1997.09.05

Revised Date : 2001.08.13

Page No. : 1/3

HI-SINCERITY

MICROELECTRONICS CORP.

HA8550

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HA8550 is designed for use in 2W output amplifier of portable radios in

class B push-pull operation.

Features

• High total power dissipation (PT: 2W, TC=25°C)

• High collector current (IC: 1.5A)

• Complementary to HA8050

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ....................................................................................................... -55 ~ +150 °C

Junction Temperature................................................................................................ +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................................... 1 W

Total Power Dissipation (Tc=25°C)................................................................................................... 2 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... -40 V

VCEO Collector to Emitter Voltage................................................................................................. -25 V

VEBO Emitter to Base Voltage......................................................................................................... -6 V

IC Collector Current ..................................................................................................................... -1.5 A

IB Base Current ............................................................................................................................ -0.5 A

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

-40

-25

-6

IC=-100uA

IC=-2mA

IE=-100uA

VCB=-35V

VEB=-6V

-100

-0.5

-1.2

-1

IEBO

*VCE(sat)

*VBE(sat)

VBE(on)

*hFE1

*hFE2

*hFE3

IC=-0.8A, IB=-80mA

VCE=-1V, IC=-10mA

VCE=-1V, IC=-5mA

VCE=-1V, IC=-100mA

VCE=-1V, IC=-800mA

VCE=-10V, IC=-50mA, f=100MHZ

100

500

MHz

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE2

Rank

Range

120-200

160-320

250-500

HA8550

HSMC Product Specification

12 3

中文翻译

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与HA8550相关器件

型号	品牌	获取价格	描述	数据表
HA8550S	HSMC	获取价格	PNP EPITAXIAL PLANAR TRANSISTOR
HA-883	INTERSIL	获取价格	Very High Slew Rate, Wideband Operational Amplifier
HA92	HUASHAN	获取价格	PNP SILICON TRANSISTOR
HA9-2510-8	RENESAS	获取价格	IC,OP-AMP,SINGLE,BIPOLAR,FP,10PIN,CERAMIC
HA9-2520-8	RENESAS	获取价格	HA9-2520-8
HA9-2522-8	RENESAS	获取价格	IC,OP-AMP,SINGLE,BIPOLAR,FP,14PIN,CERAMIC
HA9-2600-8	RENESAS	获取价格	HA9-2600-8
HA9-2602-8	RENESAS	获取价格	IC,OP-AMP,SINGLE,BIPOLAR,FP,10PIN,CERAMIC
HA94	HUASHAN	获取价格	PNP SILICON TRANSISTOR
HA940	HUASHAN	获取价格	PNP SILICON TRANSISTOR

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