Datasheet > HA8050S

HA8050S

更新时间： 2024-11-28 22:33:11

品牌	Logo	应用领域
HSMC		晶体晶体管局域网
页数	文件大小	规格书
4页	40K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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HA8050S 数据手册

Spec. No. : HE6116

Issued Date : 1997.09.08

Revised Date : 2002.04.17

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

HA8050S

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HA8550S is designed for general purpose amplifier applications.

Features

TO-92

• High DC Current Gain (hFE=100~500 at IC=150mA)

• Complementary to HA8550S

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C)................................................................................ 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 25 V

VCEO Collector to Emitter Voltage...................................................................................... 20 V

VEBO Emitter to Base Voltage.............................................................................................. 5 V

IC Collector Current........................................................................................................ 700 mA

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

100

150

IC=10uA

IC=1mA

IE=10uA

VCB=20V

VEB=6V

IEBO

100

0.5

500

*VCE(sat)

VBE(on)

*hFE1

*hFE2

IC=0.5A, IB=50mA

VCE=1V, IC=150mA

VCE=1V, IC=500mA

VCE=10V, IC=20mA, f=100MHz

VCB=10V, f=1MHz

170

MHz

Cob

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification on hFE

Rank

hFE1

100~200

150~300

250-500

HA8050S

HSMC Product Specification

12 3 4

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