Datasheet > HA114Y

HA114Y

更新时间： 2024-02-15 23:05:33

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	513K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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HA114Y 数据手册

PNP DIGITAL TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

HA114Y

█ APPLICATIONS

Switching Circuit，Interface Circuit.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92S

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

1―Emitter，E

2―Collector，C

3―Base，B

Symbol

Characteristics

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Min

-50

Typ

Max

Unit

Test Conditions

BVCBO

BVCEO

ICBO

I_C=-10μA, I =0

I_C=-1mA, I =0

V_CB=-40V, I_E=0

-0.1 μA

-0.5 μA

ICEO

Collector Cut-off Current

V_CE=-40V, I_B=0

IEBO

Emitter Cut-off Current

V_EB=-5V, I_C=0

-67 -88 -125 μA

HFE

DC Current Gain

V_CE=-5V, I_C=-5mA

I_C=-10mA, I_B=-0.5mA

V_CE=-5V, I_C=-0.1mA

V_CE=-0.2V, I_C=-10mA

VCE(sat)

Collector- Emitter Saturation Voltage

-0.1 -0.3 V

-0.5 -0.7 -0.9 V

-1.0 -2.0 -4.0 V

VI（off） Input Off Voltage

VI（on） Input On Voltage

Input Resistor

7.0

13 Kohm

R1/ R2 Resistor Ratio

0.193 0.213 0.234

Current Gain-Bandwidth Product

250

5.5

MHz V_CE=-10V, I_C=-5mA

pF V_CB=-10V, f=1MHz

Cob

Output Capacitance

中文翻译

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