Datasheet > HA1011

HA1011

更新时间： 2024-11-13 10:49:07

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
3页	230K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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HA1011 数据手册

PNP S I LI C O N TRANSISTOR

Shantou Huashan Electronic Devices Co.,Ltd.

HA1011

█ APPLICATIONS

High Voltage switching，AF Power Amp.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-220

T_stg——Storage Temperature………………………… -55~150℃

T_j——Junction Temperature……………………………… 150℃

P_C——Collector Dissipation（T_c=25℃）…………………… 25W

V_CBO——Collector-Base Voltage………………………… -180V

V_CEO——Collector-Emitter Voltage……………………… -160V

V_EBO——Emitter-Base Voltage……………………………… -6V

I_C——Collector Curren（t DC）……………………………… -1.5A

I_CP——Collector Current（Pulse）……………………………-3A

1―Base，B

2―Collector，C

3―Emitter, E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage -160

BVEBO Emitter-Base Breakdown Voltage

-180

I_C=-1mA, I_E=0

I_C=-1mA, I_B=0

I_E=-1mA，I_C=0

-6

Collector Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

ICBO

IEBO

HFE

-10 μA V_CB=-120V, I_E=0

-10 μA V_EB=-4V, I_C=0

200

V_CE=-5V, I_C=-300mA

I_C=-500mA, I_B=-50mA

V_CE=-5V,I_C=-10A

VCE(sat) Collector- Emitter Saturation Voltage

-0.5 -1.0 V

-1.5 V

VBE

Cob

ton

Base- Emitter Voltage

Output Capacitance

Current Gain-Bandwidth Product

Turn-On Time

Fall Time

Storage Time

pF V_CB=-10V, f=1MHz

MHz V_CE=-10V,I_C=-50mA

μS

100

0.29

0.19

0.48

μS See specified test circuit

μS

tstg

█ hFE Classification

60—120

100—200

12 3

中文翻译

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