Datasheet > H650TBXX

H650TBXX

更新时间： 2024-11-12 07:02:39

品牌	Logo	应用领域
HIRECT		/
页数	文件大小	规格书
6页	89K
描述
PHASE CONTROL THYRISTOR

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中文翻译

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数据手册

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H650TBXX 数据手册

PHASE CONTROL THYRISTOR H650TBXX

T_J

Symbol

Characteristics

Conditions

Value

Unit

(⁰C)

BLOCKING PARAMETERS

V_RRM

V_DRM

Repetitive peak reverse voltage

Repetitive peak off-stage

voltage

125

200-600

I_RRM

I_DRM

V = V_RRM

Repetitive peak reverse current

Repetitive peak off-state current

125

CONDUCTING PARAMETERS

180 sine, 50H_Z,

T_C= 70⁰C

I_F(AV)

Average on-state current

650

I_RMS

I_TSM

RMS on-state current

Surge on-state current

1020

Sine wave,

10mS without

reverse voltage

125

I²t

kA²S

980

On-state

current = 2 kA

V_T

Peak on-state voltage drop

1.35

V₀

R₀

Threshold voltage

On-state slope resistance

125

1.00

0.12

mΩ

TRIGGERING PARAMETERS

I_GT

V_GT

I_L

V_D= 5V

Gate trigger current

Gate trigger voltage

Latching Current

300

2.00

1000

V_D= 5V

Pulse width

100μSec

P_{G –PEAK}

Maximum Peak Gate Power

160

di/dt

V_FGM

I_FGM

Repetitive rate of rise of current

Maximum forward gate voltage

Maximum forward gate current

120

A/μSec

THERMAL & MECHANICAL PARAMETERS

Thermal impedance, 180

R_{TH (J-C)}

⁰C/W

⁰C

Junction to case

0.070

0.015

125

conduction, Sine

Case to

heatsink

R_{TH (C-HK)}

Thermal impedance

Maximum Permissible junction

temperature

T_J

T_STG

⁰C

gms

Storage temperature range

-40 - 125

Mounting Torque

Weight

875

1 of 6

HIND RECTIFIERS LTD

12 3 4 5 6

中文翻译

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