Datasheet > H5N2504D(S)-(1)

H5N2504D(S)-(1)

更新时间： 2024-01-06 17:41:45

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
12页	58K
描述
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,7A I(D),TO-252VAR

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

H5N2504D(S)-(1) 技术参数

H5N2504DL, H5N2504DS

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-1375 (Z)

1st. Edition

Mar. 2001

Features

•

Low on-resistance

Low leakage current

High speed switching

Low gate charge

Avalanche ratings

Outline

DPAK-2

H5N2504DS

1. Gate

2. Drain

3. Source

4. Drain

H5N2504DL

12 3 4 5 6 7...12

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
H5N2504D(S)-(2)	RENESAS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2504DL	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DS	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DS-E	RENESAS	获取价格	7A, 250V, 0.67ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
H5N2504DSTL-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
H5N2504DSTR-E	RENESAS	获取价格	暂无描述
H5N2505D(L)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2505D(S)-(2)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
H5N2505D(S)-(3)	HITACHI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,5A I(D),TO-252VAR