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H5MS2562JFR-E3M PDF预览

H5MS2562JFR-E3M

更新时间: 2024-01-07 15:25:38
品牌 Logo 应用领域
海力士 - HYNIX 存储内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
62页 1312K
描述
256Mb (16Mx16bit) Mobile DDR SDRAM

H5MS2562JFR-E3M 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA,
针数:60Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.82Is Samacsys:N
访问模式:FOUR BANK PAGE BURST其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B60长度:10 mm
内存密度:268435456 bit内存集成电路类型:DDR DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:60
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1 mm自我刷新:YES
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

H5MS2562JFR-E3M 数据手册

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256Mbit MOBILE DDR SDRAM based on 4M x 4Bank x16 I/O  
Specification of  
256Mb (16Mx16bit) Mobile DDR SDRAM  
Memory Cell Array  
- Organized as 4banks of 4,194,304 x16  
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for  
use of circuits described. No patent licenses are implied.  
Rev 1.2 / July. 2009  
1

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